http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102180554-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78627 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2013-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102180554-B1 |
| titleOfInvention | Thin film transistor and method for fabricating the same |
| abstract | The thin film transistor includes a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode. The semiconductor active layer includes a first doped region as a source region, a second doped region as a drain region, an undoped region between the first and second doped regions, and a third doped region between the second doped region and the undoped region. It can include areas. The gate electrode may be insulated from the semiconductor active layer and may overlap the third doped region and the undoped region. The source electrode and the drain electrode may be connected to the first and second doped regions. |
| priorityDate | 2013-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.