http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101563136-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-702 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 2009-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101563136-B1 |
| titleOfInvention | Laser processing apparatus and method for manufacturing semiconductor substrate |
| abstract | In the present invention, an SOI substrate having a single crystal semiconductor layer having a high surface flatness is manufactured.n n n By doping the semiconductor substrate with hydrogen, a damaged region containing a large amount of hydrogen is formed. After bonding the single crystal semiconductor substrate and the supporting substrate, the single crystal semiconductor substrate is separated from the damaged region by heating the semiconductor substrate. A heated high-purity nitrogen gas is sprayed onto the peeling surface of the single-crystal semiconductor layer separated from the single crystal semiconductor substrate, and a laser beam is irradiated while irradiating a microwave. By melting the single crystal semiconductor layer by irradiation with a laser beam, the flatness of the surface of the single crystal semiconductor layer is improved and the crystal is cut. In addition, the melting time is lengthened by irradiation with nitrogen gas and microwave, and the cut crystallization is more effectively performed.n n n n LTSS, laser, microwave, nitrogen, single crystal |
| priorityDate | 2008-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 95.