| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving source / drain breakdown voltage and AC stress resistance and obtaining desired current characteristics, and a method of manufacturing the same. A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film 3, the source region 45, the drain region 46, the channel region 40 having a predetermined channel length, the GOLD region 41 and the LDD region 43 having lower impurity concentrations than the source region, and the drain region, respectively. A thin film transistor T including the GOLD region 42 and the LDD region 44 having the impurity concentration, the gate insulating film 5 and the gate electrode 6a is formed. The gate electrode 6a overlaps the channel region 40 and the GOLD regions 41 and 42 so as to face each other. [Selection] Figure 1 |