http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102456077-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2227-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13067 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-3269 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-3262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate | 2015-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2022-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2022-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-102456077-B1 |
titleOfInvention | Manufacturing method of thin film transistor substrate |
abstract | According to an embodiment of the present invention, a process of forming a semiconductor pattern including a first region and a second region and a third region provided on both sides of the first region on a substrate, on the substrate to cover the semiconductor pattern A first step of forming a first insulating layer, a step of forming a metal pattern layer on the first insulating layer using a first photosensitive pattern, and a first step of doping the semiconductor pattern with a first impurity using the first photosensitive pattern A first doping process, a process of patterning the metal pattern layer using a second photosensitive pattern to form a gate electrode, and a second doping process of doping the semiconductor pattern with a second impurity at a lower concentration than the first impurity , a method for manufacturing a thin film transistor substrate is disclosed. |
priorityDate | 2015-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.