http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102456077-B1

Outgoing Links

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 2015-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102456077-B1
titleOfInvention Manufacturing method of thin film transistor substrate
abstract According to an embodiment of the present invention, a process of forming a semiconductor pattern including a first region and a second region and a third region provided on both sides of the first region on a substrate, on the substrate to cover the semiconductor pattern A first step of forming a first insulating layer, a step of forming a metal pattern layer on the first insulating layer using a first photosensitive pattern, and a first step of doping the semiconductor pattern with a first impurity using the first photosensitive pattern A first doping process, a process of patterning the metal pattern layer using a second photosensitive pattern to form a gate electrode, and a second doping process of doping the semiconductor pattern with a second impurity at a lower concentration than the first impurity , a method for manufacturing a thin film transistor substrate is disclosed.
priorityDate 2015-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 25.