| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e3687553467f6b262e5c974ef315c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5ed6804380d89bb969cbef088221d4e |
| publicationDate |
2015-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8941112-B2 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666698-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9379252-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811521-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11393918-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9343583-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10192992-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015214380-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9773810-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9768309-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910404-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388670-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9960261-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10002971-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11594639-B2 |
| priorityDate |
2010-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |