http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006303424-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1007735376d07808ebe297f823b2829 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 |
| filingDate | 2005-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45499c043ca92aa610fd710076ffd6e2 |
| publicationDate | 2006-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006303424-A |
| titleOfInvention | Method for manufacturing thin film transistor of liquid crystal display device |
| abstract | A method of manufacturing a thin film transistor for a liquid crystal display device with high cost competitiveness by reducing the number of masks to be applied is provided. A step of forming a semiconductor layer over the entire surface of a substrate on which a first element constituting a pixel portion and a second element and a third element constituting a drive circuit portion are formed, and a source and drain region of the semiconductor layer of the third element Doping a first conductive type impurity into the semiconductor layer of the first and second elements, doping a second conductive type impurity into the semiconductor layer of the first and second elements, forming a conductive layer over the entire substrate, and forming a conductive layer and a semiconductor layer below the conductive layer Forming the source, drain, and active region of the first, second, and third elements by simultaneous patterning, forming the gate insulating film on the entire substrate, and the first, second, and third elements on the gate insulating film Forming a gate electrode, forming a protective film on the entire substrate, forming a drain contact hole exposing the drain in the protective film, and draining the protective film through the drain contact hole. Comprising forming a pixel electrode connected to. [Selection] Figure 2E |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010177668-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101794049-A |
| priorityDate | 2005-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.