| abstract |
The present invention provides a method of manufacturing a low-temperature polysilicon array substrate that realizes a reduction in production cost. By adopting one half-tone photomask, the photomask in the patterning process of the polysilicon layer and the N-type heavy doping manufacturing process of the polysilicon portion in the NMOS region is reduced by one as compared with the prior art. As a result, the production cost is reduced, and the manufactured low-temperature polysilicon array substrate has excellent electrical performance. [Selection] Figure 6B |