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filingDate 2002-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004119862-A
titleOfInvention Method for manufacturing semiconductor device
abstract An object of the present invention is to provide a method for manufacturing a semiconductor device in which damage to an element caused by a plasma process or a doping process in an LDD forming step is reduced as much as possible. An LDD is formed in a state where a conductive protective film is formed so as to cover the entire surface of a substrate, so that anisotropic etching in an LDD forming step reduces the charge density accumulated in a gate electrode and reduces the density of the charge accumulated in a gate electrode. Minimize damage. Further, damage due to charged particles in a high concentration impurity doping step is reduced as much as possible. [Selection diagram] FIG.
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