| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0376 |
| filingDate |
2005-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78aa83dfb9454443017f3ff090b2314b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da845e0c0666703c36355238b8206e91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d86e7359bc32e6ba4267ba1a1739368a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2006-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006071210-A1 |
| titleOfInvention |
Semiconductor device and method of fabricating the same |
| abstract |
It is an object of the present invention to manufacture a thin film transistor having a required property without complicating steps and devices. It is another object of the present invention to provide a technique for manufacturing a semiconductor device having high reliability and better electrical characteristics with a higher yield at lower cost. In the present invention, a lightly doped impurity region is formed in a source region side or a drain region side of a semiconductor layer covered with a gate electrode layer in a thin film transistor. The semiconductor layer is doped diagonally to the surface thereof using the gate electrode layer as a mask to form the lightly doped impurity region. Therefore, the properties of the thin film transistor can be minutely controlled. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014310196-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015179699-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011294287-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005274952-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010237418-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012238046-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7368396-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8664027-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7504327-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9793314-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2466426-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007004215-A1 |
| priorityDate |
2004-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |