| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14623 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2009-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cb64e742d8b18fd3927ea5e67120eeb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70c6a8dab5367931fd7a34a87a934d9a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e432e03d83281a7953d3188091956c0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_447a9d56926fe09ed40ef8c83fe8dce4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_086f96f1eb3c99c60d348831462cf55d |
| publicationDate |
2011-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7947538-B2 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012194881-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012164821-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11764074-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8426299-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8592908-B2 |
| priorityDate |
2005-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |