| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1277 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
1994-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f128d9c2440afff71001e59f763b9ed |
| publicationDate |
1996-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0878693-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
(57) [Summary] [Object] To provide a method for improving the characteristics and reliability of a thin film transistor (TFT) formed at a maximum process temperature of 700 ° C or lower. [Structure] A crystalline silicon film is thermally oxidized, and a gate insulating film or the like of a TFT is formed by the resulting oxide. At this time, 500 to 7 to prevent thermal damage to the board Oxygen or nitrogen oxides (NO x , which are thermally excited and decomposed as an oxidizing gas by performing thermal oxidation at a temperature of 00 ° C., A reactive gas containing 0.5 ≦ x ≦ 2.5) is used. The oxidation reaction may be promoted by heating in a high-pressure nitrogen oxide atmosphere of 2 to 10 atm. By using the thermal oxide film thus obtained as a gate insulating film, deterioration due to injection of hot electrons or the like is prevented and the reliability of the device is improved. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7235498-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7618901-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6607946-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6864125-B2 |
| priorityDate |
1994-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |