| abstract |
In a semiconductor device having a structure in which a plurality of layers having different materials and formed patterns are stacked, planarization can be performed without performing polishing by CMP or planarization by SOG film formation, and further, substrate material In a semiconductor device in which a plurality of different layers are stacked, an opening is formed in an insulating film, and the opening is formed in the opening. By forming the wiring (electrode) or the semiconductor layer, the insulating film and the insulating film formed on the wiring (electrode) or the semiconductor layer are not subjected to the polishing process by the CMP method or the planarization by the film formation of the SOG film. Even the surface can be flattened. [Selection] Figure 3 |