http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9941313-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_099413ae0cf5a2b6398b5151766cd260 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2016-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_770f21dc0486f58c08159b25a1e7b655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_228e4f74ce1ee3ff6ef21d7727197da6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da418f8dec4a41ec1df6595d9c302887 |
| publicationDate | 2018-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9941313-B2 |
| titleOfInvention | Method of manufacturing thin film transistor substrate |
| abstract | A method of manufacturing a thin film transistor substrate includes forming a semiconductor pattern on a substrate, wherein the semiconductor pattern includes a first area, a second area, and a third area, wherein the second area and the third area are located on each side of the first area; forming an insulating layer on the substrate to cover the semiconductor pattern; forming a metal pattern layer on the insulating layer using a first photosensitive pattern; doping the semiconductor pattern with first impurities using the first photosensitive pattern; forming a gate electrode by patterning the metal pattern layer using a second photosensitive pattern; and doping the semiconductor pattern with second impurities having a lower concentration than the first impurities. |
| priorityDate | 2015-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.