| abstract |
A semiconductor device in which variation in electrical characteristics due to miniaturization hardly occurs is provided. A first region, a pair of second regions in contact with side surfaces of the first region, and a pair of second regions An oxide semiconductor film including a pair of third regions in contact with side surfaces of the first region, a gate insulating film provided over the oxide semiconductor film, and a first region overlapping with the first region over the gate insulating film The first region is a CAAC oxide semiconductor region, and the pair of second regions and the pair of third regions are amorphous oxide semiconductor regions containing a dopant. In addition, the dopant concentration in the pair of third regions is a semiconductor device higher than the dopant concentration in the pair of second regions. [Selection] Figure 1 |