| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2000-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8180d99e11857410fcdb989e6939cfc5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7634236f4b9e294112ee9ef4971746d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6242afafc625e9d685c427d086cd1be |
| publicationDate |
2002-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002176003-A |
| titleOfInvention |
Semiconductor layer doping method, thin film semiconductor device manufacturing method, and thin film semiconductor device |
| abstract |
(57) Abstract: A low-concentration impurity diffusion region is formed with good controllability even when a low heat-resistant substrate is used. When doping a semiconductor layer, an excimer is formed by forming a semiconductor layer on a substrate and then controlling the amount of dopant ions adsorbed on the surface of the semiconductor layer by, for example, introducing hydrogen gas during plasma irradiation. The method is characterized in that dopant ions adsorbed by a laser or the like are activated in the semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010503202-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006339205-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5237833-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7351622-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100554290-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012039085-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4579054-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7754503-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008090763-A1 |
| priorityDate |
2000-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |