http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006339205-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
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filingDate 2005-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9408ac2b26707e6d2f154b67f17fc125
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publicationDate 2006-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006339205-A
titleOfInvention Thin film transistor mounted panel and method for manufacturing the same
abstract PROBLEM TO BE SOLVED: To provide a thin film transistor mounting panel having a structure in which a thin film transistor formed on a plastic substrate is difficult to peel from the plastic substrate even by heat by laser annealing, and a method for manufacturing the same. A thin film transistor mounting panel in which amorphous silicon formed on a plastic substrate is laser annealed to form a polysilicon thin film, impurity ions are added to a predetermined region of the polysilicon thin film, and then thermally activated by laser annealing. Then, a thermal buffer film is formed between the plastic substrate and the polysilicon thin film to buffer the heat transmitted to the plastic substrate side during laser annealing. The thickness of the thermal buffer film is T (μm), the specific heat of the material of the thermal buffer film is C (J / (g · K)), the specific gravity of the material of the thermal buffer film is ρ (g / cm 3 ), the thermal buffer When the thermal conductivity of the material of the film is κ (W / (m · K)), the relationship of T ≧ 1.02 × κ / (C × ρ) is satisfied. [Selection figure] None
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