| abstract |
A semiconductor device includes a substrate, a first transistor on the substrate, and a second transistor on the substrate. The first transistor has a first threshold voltage, and a channel region and a source / drain region of the first transistor are N-type. The second transistor has a second threshold voltage, a channel region of the second transistor is an N-type, and a source / drain region of the second transistor is a P-type. The absolute value is substantially equal to the absolute value of the second threshold voltage. |