| abstract |
A method for manufacturing a semiconductor device capable of forming an LDD structure in a self-aligned manner, controlling the length of a doped region and suppressing destabilization of characteristics due to the injection of a supersaturated hydrogen atom, a semiconductor device, an electro-optical device It provides a substrate, an electro-optical device and an electronic device.n n n An electrode forming step of forming the electrode 13 above the semiconductor layer 11, an insulating film forming step of forming the insulating films 12 and 14 containing nitrogen on the electrode 13, and water vapor, oxygen, or hydrogen And a heat treatment step of forming a nitrogen concentration distribution in the insulating films 12 and 14 by heat treatment in an atmosphere containing the same.n n n n Electrode formation process, insulating film formation process, heat treatment process |