| abstract |
(57) [Abstract] [Purpose] To improve the gate electrode structure of a thin film transistor to improve electric characteristics and reliability. [Structure] A thin film semiconductor device is formed by using a transparent insulating substrate 1, and a thin film transistor 3 having a semiconductor thin film 2 as an active layer is integrally formed. The gate electrode 5 of the thin film transistor 3 has a laminated structure including a lower metal layer 6 and an upper metal layer 7. The lower metal layer 6 is mainly composed of titanium, nickel, molybdenum, tungsten or chromium. On the other hand, the upper metal layer 7 is mainly made of aluminum. |