| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ef5249fd0c2a10274c0ab6ce1834922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13454
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02672
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-58 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2009-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa8a6abc72ea672eaa31ec2e3f8c5f37 |
| publicationDate |
2009-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009144915-A1 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
Disclosed is a semiconductor device equipped with a thin film transistor (126) and a thin film diode (127). The semiconductor layer (109t) of the thin film transistor (126) and the semiconductor layer (109d) of the thin film diode (127) are crystalline semiconductor layers formed by crystallizing the same amorphous semiconductor film. The semiconductor layer (109t) of the thin film transistor (126) contains a catalyst element that works to accelerate crystallization of the amorphous semiconductor film. The semiconductor layer (109d) of the thin film diode (127) contains virtually no catalyst element. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102859693-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012060320-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011222954-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8803151-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011129441-A1 |
| priorityDate |
2008-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |