| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 |
| filingDate |
2009-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6ac109d69d07566a5c068d0d5d89d84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee22b88382f51fa1715dd355f213e246 |
| publicationDate |
2014-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-101582453-B |
| titleOfInvention |
Transistor, semiconductor device and method of manufacturing the same |
| abstract |
The invention provides a transistor capable of self-aligning top gate structure and a method of manufacturing the same. The transistor comprises an oxide TFT. The oxide TFT may include a first oxide semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region, and a gate insulating layer and a gate electrode, which are sequentiallystacked on the channel region. The invention further provides a semiconductor device of the transistor and a method of making the same. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8883556-B2 |
| priorityDate |
2008-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |