| abstract |
It is an object of the present invention to provide a high performance thin film semiconductor device, a simple manufacturing method thereof, and a display system using the device, the configuration of which is thermally oxidized after depositing a silicon film at a deposition rate of 580 ° C. or less and at the same time 6 dB / min or more. This enables high performance thin film semiconductor devices to be manufactured easily and stably, and enables low voltage and high speed using a short channel type TFT circuit as an LDD structure for realizing thin film semiconductor devices capable of low voltage and high speed operation. In addition, power consumption can be reduced, high breakdown voltage can be achieved, and the maximum impurity concentration of the LDD portion, the maximum impurity concentration of the source and drain portions, the LDD length, and the channel length can be optimized to further increase the speed. The device and the display system are characterized in that the drive signal can be configured below the TTL level. |