| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
1998-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2004-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100423162-B1 |
| titleOfInvention |
Method of manufacturing a substrate with a conductive film |
| abstract |
The present invention provides a method for producing an insulating substrate and a substrate with a conductive film which forms a nitride film on at least a portion of an oxide conductive film provided thereon, wherein the first silicon nitride film is formed in an atmosphere in which a reduction action is not caused to the oxide conductive film. After that, the second silicon nitride film is formed under the condition that the film formation speed is faster than that of the first nitride film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101222986-B1 |
| priorityDate |
1997-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |