| abstract |
The present invention provides a semiconductor device which does not easily cause variations in electrical characteristics due to miniaturization. One aspect of the present invention is a semiconductor device comprising: a first region, a pair of second regions in contact with a side surface of the first region, and a pair of third region oxide semiconductors in contact with sides of the pair of second regions a gate insulating film disposed on the oxide semiconductor film; and a first electrode on the gate insulating film in contact with the first region, wherein the first region is a CAAC oxide semiconductor region, and the pair of second regions and The pair of third regions is an amorphous oxide semiconductor region containing a dopant, and the doping concentration of the pair of third regions is higher than the doping concentration of the pair of second regions. |