http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9876119-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-443 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-443 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2016-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d98295de6b47ce1f5b1605a7ecf9af06 |
| publicationDate | 2018-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9876119-B2 |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | An oxide semiconductor film is formed over a substrate, a film of a semiconductor other than an oxide semiconductor is formed over the oxide semiconductor film, and then an oxygen atom in the oxide semiconductor film and an atom in the film of a semiconductor are bonded to each other at an interface between the oxide semiconductor film and the film of a semiconductor. Accordingly, the interface can be made continuous. Further, oxygen released from the oxide semiconductor film is diffused into the film of a semiconductor, so that the film of a semiconductor can be oxidized to form an insulating film. The use of the gate insulating film thus formed leads to a reduction in interface scattering of electrons at the interface between the oxide semiconductor film and the gate insulating film; so that a transistor with excellent electric characteristics can be manufactured. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10600918-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269976-B2 |
| priorityDate | 2011-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 139.