| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-13 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-13 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2014-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f128d9c2440afff71001e59f763b9ed |
| publicationDate |
2017-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9812560-B2 |
| titleOfInvention |
Field effect transistor and method for manufacturing the same |
| abstract |
Provided is a novel structure of a field effect transistor using a metal-semiconductor junction. The field effect transistor includes a wiring which is provided over a substrate and also functions as a gate electrode; an insulating film which is provided over the wiring, has substantially the same shape as the wiring, and also functions as a gate insulating film; a semiconductor layer which is provided over the insulating film and includes an oxide semiconductor and the like; an oxide insulating layer which is provided over the semiconductor layer and whose thickness is 5 times or more as large as the sum of the thickness of the insulating film and the thickness of the semiconductor layer or 100 nm or more; and wirings which are connected to the semiconductor layer through openings provided in the oxide insulating layer. |
| priorityDate |
2010-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |