| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2015-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fbb7b9de0a89e6b02a4ea495f48b631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62bda92ebb6b753395cadcd2de2ad402 |
| publicationDate |
2017-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9711349-B2 |
| titleOfInvention |
Processing method of stacked-layer film and manufacturing method of semiconductor device |
| abstract |
In a processing method of a stacked-layer film in which a metal film is provided on an oxide insulating film, plasma containing an oxygen ion is generated by applying high-frequency power with power density greater than or equal to 0.59 W/cm 2 and less than or equal to 1.18 W/cm 2 to the stacked-layer film side under an atmosphere containing oxygen in which pressure is greater than or equal to 5 Pa and less than or equal to 15 Pa, the metal film is oxidized by the oxygen ion, and an oxide insulating film containing excess oxygen is formed by supplying oxygen to the oxide insulating film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11699762-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10944014-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249645-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11107837-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811435-B2 |
| priorityDate |
2012-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |