| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e3687553467f6b262e5c974ef315c4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
| filingDate |
2010-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5ed6804380d89bb969cbef088221d4e |
| publicationDate |
2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8269218-B2 |
| titleOfInvention |
Display device |
| abstract |
One object is to provide a transistor including an oxide semiconductor film which is used for the pixel portion of a display device and has high reliability. A display device has a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film over the first gate insulating film; a source electrode and a drain electrode over the oxide semiconductor film; a second gate insulating film over the source electrode, the drain electrode and the oxide semiconductor film; a second gate electrode over the second gate insulating film; an organic resin film having flatness over the second gate insulating film; a pixel electrode over the organic resin film having flatness, wherein the concentration of hydrogen atoms contained in the oxide semiconductor film and measured by secondary ion mass spectrometry is less than 1×1016 cm−3. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10297322-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9129997-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10403204-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9312278-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11531243-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818795-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10514580-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10514579-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11209710-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10998447-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646378-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9298057-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380795-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8737109-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10923600-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8829512-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9449706-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11757041-B2 |
| priorityDate |
2009-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |