| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
| filingDate |
2012-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2014-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8698138-B2 |
| titleOfInvention |
Oxide semiconductor film on amorphous insulating surface |
| abstract |
Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9520287-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014349443-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10833203-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11581440-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9660518-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015177311-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10566460-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347771-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997637-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11177392-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079310-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249768-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9412876-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388797-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9799647-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9270173-B2 |
| priorityDate |
2009-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |