| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-70 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1156 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2014-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbc08ddc6d66d2b1382be7470af1e3cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa08dd1ce9b0d4cda7b7aef3d0448f94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_324fc8ab164289507a8a9391d7056b15 |
| publicationDate |
2017-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9768279-B2 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
To provide a transistor formed using an oxide semiconductor film with reduced oxygen vacancies. To provide a semiconductor device that operates at high speed. To provide a highly reliable semiconductor device. To provide a miniaturized semiconductor device. The semiconductor device includes an oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; a gate insulating film between the oxide semiconductor film and the gate electrode; and a protective insulating film that is above the oxide semiconductor film, the gate electrode, and the gate insulating film and includes a region containing phosphorus or boron. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10699904-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11430897-B2 |
| priorityDate |
2013-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |