Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02D10-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-17764 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-1776 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C14-0054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C14-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-356008 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C14-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-177 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
filingDate |
2016-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7f5b3e078329892426a83bae345c881 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_598e7504717c4325e148358d866e9309 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa07e0c99c24a951a9ae29a1ca0eb12f |
publicationDate |
2018-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10141054-B2 |
titleOfInvention |
Semiconductor device, electronic component, and electronic device |
abstract |
A semiconductor device that has a long data retention time during stop of supply of power supply voltage by reducing leakage current due to miniaturization of a semiconductor element. In a structure where charge corresponding to data is held with the use of low off-state current of a transistor containing an oxide semiconductor in its channel formation region, a transistor for reading data and a transistor for storing charge are separately provided, thereby decreasing leakage current flowing through a gate insulating film. |
priorityDate |
2015-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |