| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca8134cac682b6e7abee03d371bcbbf2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_703797f0502b9f0499024fd116eb2c8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e3687553467f6b262e5c974ef315c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_180e4abd2888dd8795a45093ee4e8011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2012-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_668c0297e68cba90bc828b7c97e1222f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41bd835057d120ec0a9d62ddd258551d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4b506884bd8e35b7fca85662fe5e673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67e7e7f1e3b1fef1bb3ffd25ec1c8c7d |
| publicationDate |
2015-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9112036-B2 |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11705525-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018033891-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653479-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152512-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11610998-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380795-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818795-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685560-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11757041-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9947800-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10050060-B2 |
| priorityDate |
2011-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |