http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9998104-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K5-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4099 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K5-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K5-153 |
| filingDate | 2015-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_594727610dcd2c320965a69d1fdd291b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bb761a089dba691e10fe050a316ea73 |
| publicationDate | 2018-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9998104-B2 |
| titleOfInvention | Semiconductor device and electronic device |
| abstract | In a configuration including a first circuit for retaining a plurality of analog voltages and a second circuit capable of reading one of the analog voltages as a digital signal, correct data can be read even when characteristics of transistors in the first and second circuits vary with the temperature change. A reference voltage is applied to a gate of a transistor in the second circuit whose threshold voltage varies with the temperature change, and a corrected reference voltage is generated by adding a threshold voltage variation of the transistor in the second circuit to the reference voltage. An analog voltage is read out as a digital signal with the use of the corrected reference voltage, resulting in readout of correct data obtained by canceling out variations in characteristics due to the temperature change of the transistor in the first circuit. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11243235-B2 |
| priorityDate | 2014-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 129.