| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0948
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0963
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-017 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2016-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f44ea9ad1f35d46fdc58c55596dd477b |
| publicationDate |
2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9935633-B2 |
| titleOfInvention |
Logic circuit, semiconductor device, electronic component, and electronic device |
| abstract |
The drive capability of a logic circuit is improved. The logic circuit includes a first output node, a dynamic logic circuit, a diode-connected first transistor, and a capacitor. The dynamic logic circuit includes a second output node and a plurality of second transistors forming and evaluation circuit. The first transistor and the plurality of second transistors all have one of an n-type conductivity and a p-type conductivity. One terminal of the capacitor is electrically connected to the first output node. The other terminal of the capacitor is electrically connected to the second output node. A first terminal of the first transistor is electrically connected to the first output node. A first voltage is input to a second terminal of the first transistor. The voltage of the first output node is changed by a voltage applied to a back gate of the first transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022328092-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10917598-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11705184-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11777502-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11410716-B2 |
| priorityDate |
2015-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |