| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2016-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f3edd808a38c8eb882cbbcb19bdd830
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c28ec5bba24816522097220788a1f045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78aa83dfb9454443017f3ff090b2314b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2627974b94ebbe182a376fa15d81bafd |
| publicationDate |
2017-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9711610-B2 |
| titleOfInvention |
Semiconductor device having oxide semiconductor layer |
| abstract |
The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11757007-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11282965-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11276685-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10903206-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11063125-B2 |
| priorityDate |
2012-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |