Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
filingDate |
2016-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6539728aad4a708a8bf00790526094dc |
publicationDate |
2017-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9660100-B2 |
titleOfInvention |
Semiconductor device and method for manufacturing the same |
abstract |
A semiconductor device is formed in such a manner that a first insulator, a first oxide semiconductor, and a first conductor are formed; the first conductor is processed to form a second conductor; the first oxide semiconductor is processed to form a second oxide semiconductor; a second insulator is formed over the second conductor; a third insulator is formed over the second insulator; a fourth insulator is formed over the third insulator; the fourth insulator, the third insulator, the second insulator, and the second conductor are selectively processed to partly expose the second oxide semiconductor; a fifth insulator is formed over the second oxide semiconductor and the fourth insulator; and a third conductor is formed over the fifth insulator and then chemical mechanical polishing treatment is performed to expose a top surface of the fourth insulator. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388796-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10256348-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10096718-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017025548-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11217703-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189736-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10804272-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11276782-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11495690-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11211500-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9905657-B2 |
priorityDate |
2015-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |