Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14616 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-07749 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04W88-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-07758 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-077 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04W88-02 |
filingDate |
2016-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
publicationDate |
2021-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11189736-B2 |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. The semiconductor device includes an oxide semiconductor; a second insulator; a first conductor and a first insulator that are embedded in the second insulator; a second conductor; a third conductor; and a third insulator covering the oxide semiconductor. The oxide semiconductor includes a region where an angle formed between a plane that is parallel to a bottom surface of the oxide semiconductor and the side surface of the oxide semiconductor is greater than or equal to 30° and less than or equal to 60°. |
priorityDate |
2015-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |