| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2021-775 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate |
2012-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2013-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013149968-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
An object of the present invention is to reduce oxygen vacancies existing in and near an oxide semiconductor film and improve electrical characteristics of a transistor including the oxide semiconductor film. In addition, a highly reliable semiconductor device including a transistor including an oxide semiconductor film is provided. In a transistor using an oxide semiconductor film, at least one of insulating films in contact with the oxide semiconductor film is an insulating film containing excess oxygen. The excess oxygen contained in the insulating film in contact with the oxide semiconductor film can reduce oxygen vacancies existing in the oxide semiconductor film and in the vicinity of the oxide semiconductor film. Note that the insulating film containing surplus oxygen has two or more surplus oxygen concentration maximum values in the depth direction. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10699904-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021036613-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011648-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015188079-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361290-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11640996-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10680116-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019138714-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189736-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11094804-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015053478-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020061560-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020065076-A |
| priorityDate |
2011-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |