http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10026847-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2012-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_573eef81bb8fdffdb104a08d2220f841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d98295de6b47ce1f5b1605a7ecf9af06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa6d400b8208f822063d7aa61303a6d6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e9e91168d4739ff4d33862fe0025498 |
| publicationDate | 2018-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-10026847-B2 |
| titleOfInvention | Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element |
| abstract | In a semiconductor element including an oxide semiconductor film as an active layer, stable electrical characteristics are achieved. A semiconductor element includes a base film which is an oxide film at least a surface of which has crystallinity; an oxide semiconductor film having crystallinity over the base film; a gate insulating film over the oxide semiconductor film; a gate electrode overlapping with at least the oxide semiconductor film, over the gate insulating film; and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. The base film is a film containing indium and zinc. With the structure, a state of crystals in the oxide semiconductor film reflects that in the base film; thus, the oxide semiconductor film can have crystallinity in a large region in the thickness direction. Accordingly, the electrical characteristics of the semiconductor element including the film can be made stable. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741695-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380795-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818795-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11424368-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11757041-B2 |
| priorityDate | 2011-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 201.