| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2016-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42fb804e2a90500887ab05287af89732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fbfbc4d0c1120149ae87451ba9dfcb2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acfda3f82c615552b124ce95e84ced25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90a374176e49b6949d98fca23538a820
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6539728aad4a708a8bf00790526094dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b44f76e49b36dd2909eb36bf02900988 |
| publicationDate |
2018-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9954113-B2 |
| titleOfInvention |
Transistor including oxide semiconductor, semiconductor device including the transistor, and electronic device including the transistor |
| abstract |
A transistor with favorable electrical characteristics is provided. A transistor with stable electrical characteristics is provided. A semiconductor device having a high degree of integration is provided. Side surfaces of an oxide semiconductor layer in which a channel is formed are covered with an oxide semiconductor layer, whereby impurity diffusion from the side surfaces of the oxide semiconductor into the inside can be prevented. A gate electrode is formed by a damascene process, whereby transistors can be miniaturized and formed at a high density. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11724354-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11699704-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11264511-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021101249-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11133420-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11276782-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10777581-B2 |
| priorityDate |
2015-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |