abstract |
A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %. |