| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3284
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-76 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B28B11-243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-453
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-363 |
| filingDate |
2012-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9b8a324c292e8d8eaa4da36f7357b77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cd54b123a684f895f190136e9ca3c5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09932973f1b813ee358d0f722fee1a93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf0a77ffc22328298fb7190ebe0dee35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1529047f378776a1c4c296aff77d717b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eeb28b9ce64a0bca4e70ad5d796b2f27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94be08b26f8d4214f1b952ccdf04b9f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ab94ab226b45df4ba747bc2c5b4643a |
| publicationDate |
2014-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140119835-A |
| titleOfInvention |
Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
| abstract |
The transistor formed using the oxide semiconductor has a lower reliability than the transistor formed using the amorphous silicon. Therefore, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. The oxide semiconductor film is deposited by a sputtering method using a sputtering target including an oxide semiconductor in which the c-axis direction of the crystal has a degree of crystallinity parallel to the normal vector of the upper surface of the oxide semiconductor. The target is formed by mixing the raw materials so that the composition ratio can be obtained. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10316404-B2 |
| priorityDate |
2011-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |