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publicationNumber JP-2013144841-A
titleOfInvention Target, method for using target, and method for manufacturing semiconductor device
abstract A transistor using an oxide semiconductor may be less reliable than a transistor using amorphous silicon. Thus, a semiconductor device including a transistor including an oxide semiconductor with high reliability is manufactured. SOLUTION: A sputtering target made of an oxide semiconductor having a crystal region in which a c-axis is formed by mixing raw materials so as to obtain a composition ratio so that a crystal structure is obtained and is parallel to a normal vector on an upper surface is used. An oxide semiconductor film is formed by a sputtering method. [Selection] Figure 1
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