Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2014-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_324fc8ab164289507a8a9391d7056b15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0c9203dec70d7cfafab390869b80d61 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98a50d21ceba6536a4663c7f4cff2d4e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71d50a7293caba9c14997027f9784f5a |
publicationDate |
2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9006735-B2 |
titleOfInvention |
Method for processing oxide semiconductor film and method for manufacturing semiconductor device |
abstract |
To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380795-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831347-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11757041-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818795-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10128378-B2 |
priorityDate |
2011-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |