| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6811a5adf290b48d13c4ecff51b8609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdc7a770cd0e8f36f7d56080858657df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2012-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51a6618f635f7cdc7e21fabb46150aa0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68c3e36c4aaefd8b15776e953398f819 |
| publicationDate |
2015-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8946790-B2 |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
A transistor which includes an oxide semiconductor and is capable of high-speed operation and a method of manufacturing the transistor. In addition, a highly reliable semiconductor device including the transistor and a method of manufacturing the semiconductor device. The semiconductor device includes an oxide semiconductor layer including a channel formation region, and a source and drain regions which are provided so that the channel formation region is interposed therebetween and have lower resistance than the channel formation region. The channel formation region and the source and drain regions each include a crystalline region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9917203-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11094804-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9112074-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361290-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016043228-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11640996-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10680116-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014284598-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011648-B2 |
| priorityDate |
2011-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |