| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e3687553467f6b262e5c974ef315c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2012-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5ed6804380d89bb969cbef088221d4e |
| publicationDate |
2013-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8536571-B2 |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
A manufacturing method of a semiconductor device includes the steps of: forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film; performing heat treatment to form a second oxide semiconductor film after the step of forming the first oxide semiconductor film; forming a first conductive film; forming a first resist mask including regions whose thicknesses are different; etching the second oxide semiconductor film and the first conductive film using the first resist mask to form a third oxide semiconductor film and a second conductive film; reducing the size of the first resist mask to form a second resist mask; selectively etching the second conductive film using the second resist mask to remove a part of the second conductive film so that a source electrode and a drain electrode are formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9570484-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9881939-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11349006-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016163866-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9871058-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9482919-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018308879-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10461099-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9960282-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8921948-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8759820-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10411134-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831274-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11094830-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10192908-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11652110-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10777685-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9735281-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10892282-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012043541-A1 |
| priorityDate |
2011-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |