| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2001-133357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-134336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13394
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1339
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2001-133302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1337 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C19-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13454
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-247 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1339
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C19-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1345 |
| filingDate |
2016-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_086f96f1eb3c99c60d348831462cf55d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5a79f4c83d6887d5708274a362a3a58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94be08b26f8d4214f1b952ccdf04b9f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfdc2523237cb8b323317ebc308dbfe5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f276d519ba89eed523a468701f069b6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eee9961b51571967dc67c5e29fc67329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2017-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9837442-B2 |
| titleOfInvention |
Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state |
| abstract |
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11137651-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10439072-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11327376-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10852576-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10615052-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11387116-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11543718-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10877338-B2 |
| priorityDate |
2009-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |