| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8c2645a58e9a956ddc7546e94a75258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_542425a15ccd4ff5597aff0a7a1170e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e3687553467f6b262e5c974ef315c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_19f24de72b4a0fe23a07b349c5b25a85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_61c973cd03c56cd4942c7dae43805144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-003 |
| filingDate |
2010-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b013e57274e8a443da56d6694102b4e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dca7a6f7b59beb198f4ca2980fc8f925
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3911d56508fb81d9abe67fa821aa1796
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33092e557dd6be329e163d1ea84e6e32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b67cc0db42431de614595c12b2fef8e |
| publicationDate |
2012-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8305109-B2 |
| titleOfInvention |
Logic circuit, light emitting device, semiconductor device, and electronic device |
| abstract |
An object is to obtain a desired threshold voltage of a thin film transistor using an oxide semiconductor. Another object is to suppress a change of the threshold voltage over time. Specifically, an object is to apply the thin film transistor to a logic circuit formed using a transistor having a desired threshold voltage. In order to achieve the above object, thin film transistors including oxide semiconductor layers with different thicknesses may be formed over the same substrate, and the thin film transistors whose threshold voltages are controlled by the thicknesses of the oxide semiconductor layers may be used to form a logic circuit. In addition, by using an oxide semiconductor film in contact with an oxide insulating film formed after dehydration or dehydrogenation treatment, a change in threshold voltage over time is suppressed and the reliability of a logic circuit can be improved. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11588058-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014266304-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9548133-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9397664-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017110453-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079231-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9444459-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9537014-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9590115-B2 |
| priorityDate |
2009-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |