| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6c4c4d1d42db8e0a99f08121b3f87cf |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-70 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C7-00 |
| filingDate |
2012-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a94d15c694f8626f6b6ad298a71d946 |
| publicationDate |
2015-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8929161-B2 |
| titleOfInvention |
Signal processing circuit |
| abstract |
A signal processing circuit including a nonvolatile storage circuit with a novel structure. The signal processing circuit includes a circuit that is supplied with a power supply voltage and has a first node to which a first high power supply potential is applied, and a nonvolatile storage circuit for holding a potential of the first node. The nonvolatile storage circuit includes a transistor whose channel is formed in an oxide semiconductor layer, and a second node that is brought into a floating state when the transistor is turned off. A second high power supply potential or a ground potential is input to a gate of the transistor. When the power supply voltage is not supplied, the ground potential is input to the gate of the transistor and the transistor is kept off. The second high power supply potential is higher than the first high power supply potential. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9165632-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10445227-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9887212-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9979386-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10019348-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014204696-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015263047-A1 |
| priorityDate |
2011-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |