| abstract |
It is to provide a semiconductor memory device in which high voltage is not needed in writing, a defect is less likely to occur, the writing time is short, and data cannot be rewritten without an increase in cost. The semiconductor memory device includes a memory element which includes a diode-connected first transistor, a second transistor whose gate is connected to one terminal of a source electrode and a drain electrode of the diode-connected first transistor, and a capacitor connected to the one terminal of the source electrode and the drain electrode of the diode-connected first transistor and the gate of the second transistor. |